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Comment on the Dependence of Rand Current Noise on Grain Size in Thick Film Resistors (TFR's)
Author(s) -
Manfred Wolf,
Franz Müller,
H. Hemschik
Publication year - 1984
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1985/68618
Subject(s) - resistor , electrical resistivity and conductivity , grain size , noise (video) , current (fluid) , condensed matter physics , thermal conduction , volume fraction , component (thermodynamics) , metal , volume (thermodynamics) , materials science , electrical engineering , physics , thermodynamics , composite material , metallurgy , engineering , computer science , voltage , image (mathematics) , artificial intelligence
The heterogeneous structure of TFR's results in high resistivities and high current noise. Accepting models of conduction in TFR's, according to which the resistivity is determined by a resistance independent of bulk-resistivity of a metallic-like component, it will be shown, that R□ and Ceff*(describing current noise behaviour) increase with d and d3, respectively, when d is the grain size. On the other hand, both quantities depend on the volume fraction of the metallic component in the same manner. This leads to the conclusion, that a general dependence in the form Ceff*= f(R□) cannot exist.

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