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Voltage Degradation Model of Thin Film Capacitors
Author(s) -
T.M. Berlicki
Publication year - 1984
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1985/26014
Subject(s) - capacitor , degradation (telecommunications) , voltage , materials science , thin film , film capacitor , function (biology) , electrical engineering , composite material , optoelectronics , engineering , nanotechnology , evolutionary biology , biology
A degradation model of thin film capacitors is presented. This model takes into consideration that:(a) the damage rate dD/dt is a function of the damage value D, and (b) the critical damage Dc is afunction of working voltage. On the base of this model, the short term breakdown voltage and itsdistribution is defined. The experimental data presented conforms with the described model

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