Thin Metal Film Sensors
Author(s) -
C. R. Tellier
Publication year - 1984
Publication title -
active and passive electronic components
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.144
H-Index - 22
eISSN - 1026-7034
pISSN - 0882-7516
DOI - 10.1155/1985/17659
Subject(s) - electromigration , thin film , grain boundary , materials science , grain size , grain boundary diffusion coefficient , electrical resistivity and conductivity , metal , thermal , diffusion , composite material , metallurgy , nanotechnology , electrical engineering , engineering , microstructure , physics , meteorology , thermodynamics
During the last decade some progress have been made in the field of sensors using thin film techniques.In particular thin metal film strain gauges and thin film temperature sensors based on the temperaturedependent resistivity of metal are now commonly used. But changes in other transport parameters withvarious measurands are also useful for the design of metal film sensors. Difficulty arises in thin filmtechniques when structural defects are frozen in films
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