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The error (related) negativity (Ne/ERN) is an event-related potential in the electroencephalogram (EEG) correlating with error processing. Its conditions of appearance before terminal external error information suggest that the Ne/ERN is indicative of predictive processes in the evaluation of errors. The aim of the present study was to specifically examine the Ne/ERN in a complex motor task and to particularly rule out other explaining sources of the Ne/ERN aside from error prediction processes. To this end, we focused on the dependency of the Ne/ERN on visual monitoring about the action outcome after movement termination but before result feedback (action effect monitoring). Participants performed a semi-virtual throwing task by using a manipulandum to throw a virtual ball displayed on a computer screen to hit a target object. Visual feedback about the ball flying to the target was masked to prevent action effect monitoring. Participants received a static feedback about the action outcome (850 ms) after each trial. We found a significant negative deflection in the average EEG curves of the error trials peaking at ~250 ms after ball release, i.e., before error feedback. Furthermore, this Ne/ERN signal did not depend on visual ball-flight monitoring after release. We conclude that the Ne/ERN has the potential to indicate error prediction in motor tasks and that it exists even in the absence of action effect monitoring. NEW &amp; NOTEWORTHY In this study, we are separating different kinds of possible contributors to an electroencephalogram (EEG) error correlate (Ne/ERN) in a throwing task. We tested the influence of action effect monitoring on the Ne/ERN amplitude in the EEG. We used a task that allows us to restrict movement correction and action effect monitoring and to control the onset of result feedback. We ascribe the Ne/ERN to predictive error processing where a conscious feeling of failure is not a prerequisite.

Brain negativity as an indicator of predictive error processing: the contribution of visual action effect monitoring