Open AccessNegative Bias Temperature Instability Study on Ge0.97Sn0.03 P-MOSFETs with Si2H6 Passivation, HfO2 High-k Dielectric and TaN Metal Gate
Author(s) -
Xiao Gong,
Shaojian Su,
Bin Liu,
Lanxiang Wang,
Wei Wang,
Yue Yang,
Eugene Y.-J. Kong,
Buwen Cheng,
Genquan Han,
YeeChia Yeo
Publication year - 2012
Publication title -
ecs meeting abstracts
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2012-02/43/3224
Subject(s) - passivation , dielectric , materials science , negative bias temperature instability , gate dielectric , high κ dielectric , metal gate , optoelectronics , instability , metal , mosfet , condensed matter physics , analytical chemistry (journal) , electrical engineering , gate oxide , chemistry , nanotechnology , physics , metallurgy , engineering , transistor , voltage , layer (electronics) , environmental chemistry , quantum mechanics
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom