Open AccessEffect of Fin Doping Concentration on the Electrical Characteristics of Germanium-on-Insulator Multi-Gate Field-Effect Transistor
Author(s) -
Bin Liu,
Xiao Gong,
Chunlei Zhan,
Genquan Han,
Nicolas Daval,
Christelle Veytizou,
D. Delprat,
Bich-Yen Nguyen,
YeeChia Yeo
Publication year - 2012
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2012-02/43/3103
Subject(s) - fin , germanium , materials science , doping , field effect transistor , optoelectronics , transistor , silicon on insulator , electrical engineering , silicon , composite material , engineering , voltage
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