Open AccessEffects of Proton Irradiation on the Reliability of InAlN/GaN High Electron Mobility Transistors
Author(s) -
Lu Liu,
C. F. Lo,
Y. S. Wang,
HyoSeob Kim,
HyoSeob Kim,
S. J. Pearton,
Oleg Laboutin,
Yu Cao,
J. W. Johnson,
Ivan I. Kravchenko,
F. Ren
Publication year - 2012
Publication title -
ecs meeting abstracts
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2012-02/41/3015
Subject(s) - materials science , reliability (semiconductor) , transistor , optoelectronics , irradiation , proton , electrical engineering , physics , engineering , nuclear physics , voltage , quantum mechanics , power (physics)
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