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Physical Mechanisms of Charge Pumping and DCIV Currents in Floating-Body SOI MOSFETs
Author(s) -
En Xia Zhang,
Dan Fleetwood,
Ronald D. Schrimpf,
Eddy Simoen,
Dmitri Linten
Publication year - 2012
Publication title -
ecs meeting abstracts
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2012-02/32/2641
Subject(s) - silicon on insulator , charge (physics) , mosfet , materials science , optoelectronics , electrical engineering , physics , engineering physics , voltage , engineering , transistor , silicon , quantum mechanics

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