Open AccessEffect of Individual and Bi-layer Stack Gate Dielectric on Device Performance for Amorphous Indium Gallium Zinc Oxide (a-IGZO) TFTs
Author(s) -
Ahmed Kiani,
Sieglinde M.-L. Pfaendler,
Bernhard C. Bayer,
D. G. Hasko,
William Milne,
Andrew J. Flewitt
Publication year - 2012
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2012-01/22/936
Subject(s) - materials science , gallium , optoelectronics , amorphous solid , zinc , indium , dielectric , layer (electronics) , stack (abstract data type) , gate dielectric , thin film transistor , nanotechnology , electrical engineering , metallurgy , transistor , computer science , chemistry , engineering , crystallography , voltage , programming language
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