Open AccessSuperatmospheric MOCVD Reactor Design for High Quality InGaN Growth
Author(s) -
Andrew Melton,
Phill Davis,
Mesbah Uddin,
E. B. Stokes
Publication year - 2012
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2012-01/22/917
Subject(s) - metalorganic vapour phase epitaxy , materials science , quality (philosophy) , optoelectronics , nanotechnology , physics , epitaxy , layer (electronics) , quantum mechanics
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