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Characteristics of Low-Temperature(≤100 °) Cat-CVD Silicon Nitride Films for Gate Dielectrics on Flexible Substrates
Author(s) -
KiSu Keum,
Jung Hoon Park,
Sin-Young Kang,
TaeHo Song,
Kil Sun No,
WanShick Hong
Publication year - 2012
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2012-01/2/53
Subject(s) - materials science , silicon nitride , optoelectronics , dielectric , silicon , gate dielectric , nitride , engineering physics , nanotechnology , electrical engineering , layer (electronics) , transistor , engineering , voltage
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