Open AccessIntegration of InGaAs Channel n-MOS Devices on 200mm Si Wafers Using the Aspect-Ratio-Trapping Technique
Author(s) -
Niamh Waldron,
Gang Wang,
Ngoc Duy Nguyen,
Tommaso Orzali,
Clément Merckling,
Guy Brammertz,
Patrick Ong,
Gillis Winderickx,
Geert Hellings,
Geert Eneman,
Matty Caymax,
Marc Meuris,
Naoto Horiguchi,
Aaron Thean
Publication year - 2012
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2012-01/17/766
Subject(s) - wafer , trapping , materials science , optoelectronics , channel (broadcasting) , aspect ratio (aeronautics) , nanotechnology , electrical engineering , engineering , ecology , biology
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