Open AccessResistive Switching Characteristics of ZnO for Nonvolatile Memory Applications
Author(s) -
JrHau He,
Wen-Yuan Chang,
JrJian Ke,
José Ramón Durán Retamal
Publication year - 2012
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2012-01/16/733
Subject(s) - non volatile memory , materials science , resistive touchscreen , optoelectronics , resistive random access memory , electrical engineering , engineering physics , voltage , engineering
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom