Open AccessMechanism of Difficulty to Study the Physics of Leakage Current Reduction by Nitridation of Silicon before High-k Dielectric Deposition Due to Change in Nucleation Characteristics
Author(s) -
Wai Shing Lau
Publication year - 2012
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2012-01/16/713
Subject(s) - nucleation , dielectric , silicon , materials science , mechanism (biology) , engineering physics , leakage (economics) , deposition (geology) , optoelectronics , high κ dielectric , reduction (mathematics) , nanotechnology , current (fluid) , electrical engineering , physics , engineering , thermodynamics , geology , mathematics , paleontology , geometry , macroeconomics , quantum mechanics , sediment , economics
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