Open AccessImpact of Si Diffusion Barrier Layer Formed on TiN Surface by In Situ Oxygen Treatment Process for Advanced Gate-First Metal/High-k Stacks
Author(s) -
Naomu Kitano,
Keisuke Chikaraishi,
Hiroaki Arimura,
Takuji Hosoi,
Takayoshi Shimura,
Takuya Seino,
Heiji Watanabe,
Takashi Nakagawa
Publication year - 2012
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2012-01/16/691
Subject(s) - tin , materials science , diffusion barrier , layer (electronics) , in situ , metal gate , metal , diffusion , barrier layer , process (computing) , oxygen , optoelectronics , metallurgy , nanotechnology , chemistry , electrical engineering , gate oxide , computer science , engineering , physics , organic chemistry , transistor , voltage , thermodynamics , operating system
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