Open AccessIn Situ Deposited HfO2 with a-Si Passivation as a Potential Gate Stack for High Mobility (In)GaSb- Based p-MOSFETs
Author(s) -
Padmaja Nagaiah,
Vadim Tokranov,
Michail M. Yakimov,
Steven Novak,
H. Bakhru,
S. Oktyabrsky
Publication year - 2011
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2011-02/27/1900
Subject(s) - passivation , materials science , in situ , optoelectronics , stack (abstract data type) , silicon , engineering physics , nanotechnology , layer (electronics) , chemistry , computer science , engineering , organic chemistry , programming language
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