Open AccessCharge Trapping and Reliability Properties of MONOS Memory with High-k Blocking Layer
Author(s) -
Naoki Yasuda,
Shosuke Fujii,
Jun Fujiki,
Haruka Kusai
Publication year - 2011
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2011-01/22/1387
Subject(s) - trapping , reliability (semiconductor) , blocking (statistics) , charge (physics) , layer (electronics) , materials science , optoelectronics , nanotechnology , computer science , physics , computer network , thermodynamics , quantum mechanics , ecology , power (physics) , biology
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