Open AccessInfluence of Residual Ions and Gases at Si/SiO2 Interface in Ultra-Thin Gate Oxide
Author(s) -
TzuYu Chen,
Hanwei Lu,
JennGwo Hwu
Publication year - 2011
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2011-01/21/1340
Subject(s) - oxide , ion , residual , interface (matter) , materials science , gate oxide , optoelectronics , computer science , chemistry , composite material , electrical engineering , engineering , metallurgy , algorithm , transistor , organic chemistry , capillary number , voltage , capillary action
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