Open AccessReduction of dislocation in GaN epitaxial layer grown on (111)-oriented Silicon by using InN inter-layer
Author(s) -
Ki-Won Kim,
DongSeok Kim,
JongSub Lee,
Jeong Yong Lee
Publication year - 2009
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2009-01/21/893
Subject(s) - layer (electronics) , materials science , dislocation , epitaxy , silicon , optoelectronics , composite material
not Available.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom