Open AccessPhotoelectrochemical H2 Gas Generation Improvement with Thin p-Type GaN Layer on n-Type GaN
Author(s) -
Katsushi Fujii,
Masato Ono,
Yasuhiro Iwaki,
Takafumi Yao,
Kazuhiro Ohkawa
Publication year - 2008
Publication title -
ecs meeting abstracts
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2008-01/9/351
Subject(s) - layer (electronics) , optoelectronics , materials science , gallium nitride , wide bandgap semiconductor , photoelectrochemistry , nanotechnology , chemistry , electrode , electrochemistry
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