Open AccessElectrical and Materials Characterization of HfO2 and ZrO2 Thin Films for High-K Gate Applications Deposited by ALD in a 300 mm Reactor
Author(s) -
L. F. Edge,
P. Jamison,
Hemanth Jagannathan,
B.P. Linder,
J. Bruley,
M. Copel,
Jean JordanSweet,
Richard J. Murphy,
V. Narayanan,
Vamsi Paruchuri,
Steven Consiglio,
Cory S. Wajda,
Gert J. Leusink,
Robert D. Clark
Publication year - 2008
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2008-01/16/643
Subject(s) - characterization (materials science) , materials science , high κ dielectric , atomic layer deposition , thin film , optoelectronics , nanotechnology , dielectric
not Available.
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