Impact of Polarons on the Mobility of Non-Ideal Metal/High-k Gate Stack MOSFETs
Author(s) -
Raheel Shah,
Merlyne De Souza
Publication year - 2007
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2007-01/29/1102
Subject(s) - polaron , stack (abstract data type) , ideal (ethics) , metal gate , materials science , optoelectronics , high κ dielectric , metal , mosfet , electrical engineering , electronic engineering , engineering physics , computer science , gate oxide , physics , voltage , engineering , transistor , quantum mechanics , metallurgy , philosophy , epistemology , dielectric , programming language , electron
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