Open AccessIn-Situ HCl Etching and Selective Epitaxial Growth of B-doped Ge for the Formation of Recessed and Raised Sources and Drains
Author(s) -
JeanMichel Hartmann
Publication year - 2006
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2006-02/31/1453
Subject(s) - in situ , epitaxy , etching (microfabrication) , doping , materials science , optoelectronics , nanotechnology , chemistry , layer (electronics) , organic chemistry
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