Open AccessEffect of T-Shaped Gate Structure on RF Characteristics of AlGaN/GaN Short-Gate HEMTs
Author(s) -
Kenji Shiojima,
T. Makimura,
Takashi Maruyama,
Tetsuya Suemitsu,
Naoteru Shigekawa,
Masanobu Hiroki,
Haruki Yokoyama
Publication year - 2006
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2005-02/21/811
Subject(s) - materials science , optoelectronics , high electron mobility transistor , electrical engineering , transistor , engineering , voltage
not Available.
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