Open AccessAsymmetric Distribution of Charge Trap inHfO2-based High-k Gate Dielectrics
Author(s) -
Keiichi Higuchi,
Tatuya Naito,
Akira Uedono,
Kenji Shiraishi,
Kazuyoshi Torii,
Mauro Boero,
Toyohiro Chikyow,
Satoshi Yamasaki,
Keisaku Yamada,
Ryu Hasumuma,
Kikuo Yamabe
Publication year - 2006
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - Uncategorized
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2005-02/13/576
Subject(s) - trap (plumbing) , dielectric , distribution (mathematics) , materials science , high κ dielectric , charge (physics) , optoelectronics , charge density , atomic physics , condensed matter physics , physics , particle physics , mathematics , quantum mechanics , meteorology , mathematical analysis
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom