Open AccessElectrical Breakdown and Reliability of Metal Gate - La2O3 Thin Films after Post Deposition Annealing in N2
Author(s) -
Joel MolinaReyes,
Kazuo Tsutsui,
Hiroshi Iwai
Publication year - 2006
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2005-02/13/574
Subject(s) - materials science , annealing (glass) , metal , time dependent gate oxide breakdown , reliability (semiconductor) , thin film , metal gate , optoelectronics , composite material , metallurgy , nanotechnology , electrical engineering , gate dielectric , gate oxide , voltage , engineering , physics , transistor , power (physics) , quantum mechanics
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