Open AccessCharge Trapping, Negative Bias Temperature Instability (NBTI) and Breakdown related Reliability Issues in High k /Gate Dielectric Stacks
Author(s) -
Sufi Zafar,
A. Vayshenker,
Alessando Callegari,
Evgeni Gusev,
V. Narayanan,
G. Singco
Publication year - 2006
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2005-02/13/560
Subject(s) - negative bias temperature instability , reliability (semiconductor) , materials science , trapping , dielectric , high κ dielectric , dielectric strength , optoelectronics , instability , gate dielectric , condensed matter physics , electrical engineering , threshold voltage , physics , voltage , engineering , transistor , thermodynamics , biology , mechanics , ecology , power (physics)
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