Open AccessThe Influence of N Incorporation on the Crystallization Kinetics of Hf Based Gate Dielectric Films
Author(s) -
Patrick Lysaght,
Joel Barnett,
Manuel Quevedo-López,
Paul Kirsch,
G. Bersuker,
Mark Gardner,
Byoung Hun Lee
Publication year - 2006
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2005-02/13/520
Subject(s) - crystallization , kinetics , dielectric , materials science , gate dielectric , chemical engineering , optoelectronics , electrical engineering , physics , engineering , voltage , transistor , quantum mechanics
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