Open AccessCharacteristics of Thermally Oxidized-Ti as a High-k Gate Dielectric on SiC Metal-Oxide-Semiconductor Devices
Author(s) -
Rajat Mahapatra,
N. Poolamai,
Nicolas G. Wright,
P. G. Coleman,
P. E. Burrows
Publication year - 2006
Publication title -
meeting abstracts/meeting abstracts (electrochemical society. cd-rom)
Language(s) - English
Resource type - Journals
eISSN - 2151-2035
pISSN - 1091-8213
DOI - 10.1149/ma2005-02/13/494
Subject(s) - materials science , high κ dielectric , oxide , dielectric , optoelectronics , semiconductor , metal , gate dielectric , gate oxide , metal gate , engineering physics , electrical engineering , metallurgy , transistor , engineering , voltage
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