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We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼10 14  cm −2 ) Si-doped  β -Ga 2 O 3  Schottky rectifiers. The diffusion length ( L ) of minority carriers is found to decrease with temperature from 330 nm at 21 °C to 289 nm at 120 °C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances  L  from 330 nm to 726 nm at room temperature. The rate of increase for  L  is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped  β -Ga 2 O 3  Schottky rectifiers is presented.

Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers

Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga₂O₃ Schottky Rectifiers