Open AccessEffect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers
Author(s) -
Sushrut Modak,
Leonid Chernyak,
Sergey Khodorov,
Igor Lubomirsky,
A. Ruzin,
Minghan Xian,
F. Ren,
S. J. Pearton
Publication year - 2020
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2162-8777/ab902b
Subject(s) - materials science , fluence , proton , irradiation , schottky diode , electron , atomic physics , diffusion , schottky barrier , doping , electron beam processing , schottky effect , analytical chemistry (journal) , activation energy , optoelectronics , nuclear physics , physics , chemistry , diode , chromatography , thermodynamics
We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼10 14 cm −2 ) Si-doped β -Ga 2 O 3 Schottky rectifiers. The diffusion length ( L ) of minority carriers is found to decrease with temperature from 330 nm at 21 °C to 289 nm at 120 °C, with an activation energy of ∼26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped β -Ga 2 O 3 Schottky rectifiers is presented.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom