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Crystalline group IV semiconductor materials are essential components in microelectronics, solar cells, and sensor applications.1 Conventional largescale production of crystalline Si relies on energy-demanding processes necessary to chemically reduce precursors at elevated temperatures.2 Exploration of alternative non-energy-intensive synthetic methods is thus critical to reduce the massive energy input in the currently available production strategies. Electrochemical deposition provides a scalable, easy-to-access option for producing semiconductor materials. Reports have demonstrated the utilization of electrodeposition in preparation of group IV semiconductors from molten salts3 or non-aqueous solvents,4 yet the challenges remain due to high crystallization barriers of covalent semiconductors to yield crystalline group IV semiconductor as-deposited at low temperature.5 Our group has recently demonstrated an electrochemical liquid-liquid-solid (ecLLS) process to electrochemically deposit crystalline Si nanocrystals under benchtop conditions at temperatures compatible with aqueous and organic solvents.6 As depicted in Fig 1a, the key innovation in

the electrochemical society interface

The 2013 H. H. Uhlig Summer Research Fellowship -- Summary Report: Temperature-dependent Electrodeposition of Crystalline Si Prepared by an Electrochemical Liquid-Liquid-Solid Growth Process