High and Low Dielectric Constant Materials
Author(s) -
Rajenda Singh,
Richard K. Ulrich
Publication year - 1999
Publication title -
the electrochemical society interface
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.568
H-Index - 46
eISSN - 1944-8783
pISSN - 1064-8208
DOI - 10.1149/2.f06992if
Subject(s) - dielectric , materials science , high κ dielectric , silicon , silicon nitride , semiconductor , silicon dioxide , optoelectronics , composite material
Silicon-based dielectrics (SiO 2 , Si 3 N 4 , SiO x N y etc.) have been widely used as the key dielectrics in the manufacturing of silicon integrated circuits (ICs) and virtually all other semiconductor devices. Dielectrics having a value of dielectric constant k × 8.854 F/cm more than that of silicon nitride (k > 7) are classified as high dielectric constant materials, while those with a value of k less than the dielectric constant of silicon dioxide (k < 3.9) are classified as the low dielectric constant materials. The minimum value of (k) is one for air. The highest value of k has been reported for relaxor ferroelectric (k = 24,700 at 1 kHz).
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