Open AccessGaN Electronics for High Power, High Temperature Applications
Author(s) -
S. J. Pearton,
F. Ren,
A. P. Zhang,
Giang T. Dang,
X. A. Cao,
H. Cho,
C. R. Abernathy,
Jitian Han,
Albert G. Baca,
C. Monier,
Peng Chang,
R. J. Shul,
L. Zhang,
J. M. Van Hove,
P. P. Chow,
Jody J. Klaassen,
C. J. Polley,
A. M. Wowchack,
David King,
S. N. G. Chu,
M. Hong,
A. Y. Polyakov,
N. B. Smirnov,
A. V. Govorkov,
J.I. Chyi,
C.-M. Lee,
TzerEn Nee,
ChangCheng Chuo,
Nils C. Gerhardt
Publication year - 2000
Publication title -
the electrochemical society interface
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.568
H-Index - 46
eISSN - 1944-8783
pISSN - 1064-8208
DOI - 10.1149/2.f06002if
Subject(s) - optoelectronics , materials science , diode , sapphire , light emitting diode , semiconductor , commercialization , laser , gallium nitride , electronics , white light , blue laser , engineering physics , nanotechnology , optics , electrical engineering , engineering , physics , layer (electronics) , political science , law
The commercialization of blue, green, and white GaN-based light-emitting diodes and violet laser diodes has created tremendous interest both from an applications viewpoint and for the basic science of the AlGaInN materials system. The fact that extremely efficient light emission can be achieved in heteroepitaxial layers of these materials grown on lattice mismatched substrates such as sapphire is counter to the experience of almost 40 years of semiconductor light source technology.
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