Silicon-Based Ultrathin Dielectrics
Author(s) -
Randhir Thakur,
Yuanning Chen,
Edward H. Poindexter,
Rajendra Singh
Publication year - 1999
Publication title -
the electrochemical society interface
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.568
H-Index - 46
eISSN - 1944-8783
pISSN - 1064-8208
DOI - 10.1149/2.f05992if
Subject(s) - silicon , electronics , cmos , materials science , transistor , integrated circuit , field effect transistor , engineering physics , semiconductor , electronic circuit , semiconductor industry , nanotechnology , electrical engineering , optoelectronics , engineering , manufacturing engineering , voltage
The phenomenal sustained growth of the electronics industry in the last three decades is primarily due to the success of silicon integrated circuit technology. As compared to any other technology, complementary metal-oxide silicon (CMOS) transistor based integrated circuits have dominated the field of semiconductor manufacturing.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom