Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes | Zendy

YenTing Chen | Zendy; Jiancheng Yang | Zendy; F. Ren | Zendy; Chin-Wei Chang | Zendy; Jenshan Lin | Zendy; S. J. Pearton | Zendy; Marko J. Tadjer | Zendy; Akito Kuramata | Zendy; YuTe Liao | Zendy

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Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga₂O₃ Schottky Diodes

Author(s) -

YenTing Chen,

Jiancheng Yang,

F. Ren,

Chin-Wei Chang,

Jenshan Lin,

S. J. Pearton,

Marko J. Tadjer,

Akito Kuramata,

YuTe Liao

Publication year - 2019

Publication title -

ecs journal of solid state science and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.488

H-Index - 51

eISSN - 2162-8777

pISSN - 2162-8769

DOI - 10.1149/2.0421907jss

Subject(s) - schottky diode , materials science , optoelectronics , breakdown voltage , diode , schottky barrier , substrate (aquarium) , metal–semiconductor junction , epitaxy , voltage , fabrication , layer (electronics) , electrical engineering , nanotechnology , engineering , medicine , oceanography , alternative medicine , pathology , geology

1Department of Electrical and Computer Engineering, National Chiao Tung University, Hsinchu, Taiwan 2Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA 3Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA 4Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA 5U.S. Naval Research Laboratory, Washington, DC 20375, USA 6Tamura Corporation and Novel Crystal Technology, Inc., Saitama 350-1328, Japan

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