Open AccessIn Situ HCl Etching of InP in Shallow-Trench-Isolated Structures
Author(s) -
Tommaso Orzali,
G. Wang,
Niamh Waldron,
Clément Merckling,
Olivier Richard,
H. Bender,
Wenlei Wang,
Matty Caymax
Publication year - 2012
Publication title -
journal of the electrochemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.258
H-Index - 271
eISSN - 1945-7111
pISSN - 0013-4651
DOI - 10.1149/2.041204jes
Subject(s) - shallow trench isolation , trench , epitaxy , metalorganic vapour phase epitaxy , materials science , optoelectronics , wafer , etching (microfabrication) , indium phosphide , planar , nanotechnology , layer (electronics) , gallium arsenide , computer graphics (images) , computer science
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