1950°C Post Implantation Annealing of Al+Implanted 4H-SiC: Relevance of the Annealing Time | Zendy

Paolo Fedeli | Zendy; M. Gorni | Zendy; A. Carnera | Zendy; A. Parisini | Zendy; Giovanni Alfieri | Zendy; Ulrike Großner | Zendy; Roberta Nipoti | Zendy

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1950°C Post Implantation Annealing of Al⁺Implanted 4H-SiC: Relevance of the Annealing Time

Author(s) -

Paolo Fedeli,

M. Gorni,

A. Carnera,

A. Parisini,

Giovanni Alfieri,

Ulrike Großner,

Roberta Nipoti

Publication year - 2016

Publication title -

ecs journal of solid state science and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.488

H-Index - 51

eISSN - 2162-8777

pISSN - 2162-8769

DOI - 10.1149/2.0361609jss

Subject(s) - annealing (glass) , materials science , wafer , solubility , analytical chemistry (journal) , atmospheric temperature range , electrical resistivity and conductivity , metallurgy , optoelectronics , chemistry , thermodynamics , electrical engineering , physics , chromatography , engineering

Previous studies have shown that the electrical activation of a given implanted Al concentration in 4H-SiC increases with the increasing of the post implantation annealing temperature up to 1950-2100 degrees C and different annealing times in the range 0.5-5 min. This study shows that, at 1950 degrees C, the electrical activation of Al implanted in 4H-SiC increases with the increase of the annealing time up to attain saturation for annealing times longer than 22 min. Samples were obtained from the same Al implanted HPSI 4H-SiC wafer with an implanted Al concentration lower than the Al solubility limit in 4H-SiC at the annealing temperature of 1950 degrees

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