Interfacial Chemistry Study of GaN by Trimethylaluminum-Only Cycles and X-ray Photoelectron Spectroscopy
Author(s) -
Tianli Duan,
Jisheng Pan,
D. S. Ang,
Chenjie Gu
Publication year - 2018
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2.0251805jss
Subject(s) - x ray photoelectron spectroscopy , materials science , layer (electronics) , gallium , stoichiometry , deposition (geology) , oxide , atomic layer deposition , spectroscopy , ion , analytical chemistry (journal) , metal , chemical engineering , nanotechnology , chemistry , metallurgy , organic chemistry , paleontology , physics , quantum mechanics , sediment , engineering , biology
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