Open AccessElectrical Properties of Thermally Annealed β-Ga2O3 Metal-Semiconductor Field-Effect Transistors with Pt/Au Schottky Contacts
Author(s) -
Suhyun Kim,
Jihyun Kim
Publication year - 2019
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2.0231907jss
Subject(s) - mesfet , materials science , schottky diode , annealing (glass) , optoelectronics , schottky barrier , field effect transistor , transistor , semiconductor , electrode , diode , electrical engineering , composite material , voltage , engineering , chemistry
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom