Medium Frequency Physical Vapor Deposited Al2O3and SiO2as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors | Zendy

Manoj Nag | Zendy; Ajay Bhoolokam | Zendy; Soeren Steudel | Zendy; Adrian Chasin | Zendy; Joris Maas | Zendy; Jan Genoe | Zendy; Mitsuhiro Murata | Zendy; G. Groeseneken | Zendy; Paul Heremans | Zendy

Open Access

Medium Frequency Physical Vapor Deposited Al₂O₃and SiO₂as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors

Author(s) -

Manoj Nag,

Ajay Bhoolokam,

Soeren Steudel,

Adrian Chasin,

Joris Maas,

Jan Genoe,

Mitsuhiro Murata,

G. Groeseneken,

Paul Heremans

Publication year - 2015

Publication title -

ecs journal of solid state science and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.488

H-Index - 51

eISSN - 2162-8777

pISSN - 2162-8769

DOI - 10.1149/2.0201505jss

Subject(s) - materials science , thin film transistor , plasma enhanced chemical vapor deposition , amorphous solid , threshold voltage , physical vapor deposition , optoelectronics , indium , gallium , layer (electronics) , chemical vapor deposition , thin film , transistor , composite material , nanotechnology , metallurgy , voltage , electrical engineering , chemistry , organic chemistry , engineering

In this work, we report on amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with medium frequency physical vapor deposited (mf-PVD) etch-stop-layer (ESL). TFT with mf-PVD ESL show comparable characteristics such as field-effect mobility (μFE), sub-threshold slope (SS−1) and current ratio (ION/OFF) to the conventional plasma enhanced chemical vapor deposition (PECVD) ESL based TFT, however significant differences were observed in gate bias-stress stabilities. The TFTs with mf-PVD ESL showed lower threshold-voltage (VTH) shifts compared to TFTs with PECVD ESL when stressed under a gate field of +/−1 MV/cm for duration of 104 seconds in dark and light conditions. We associate the better bias-stress stability of the mf-PVD ESL based TFT to better passivating properties and the low hydrogen content of the mf-PVD layer compared to PECVD layer.status: publishe

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