Open AccessEditors' Choice—Epitaxial CVD Growth of Ultra-Thin Si Passivation Layers on Strained Ge Fin Structures
Author(s) -
Roger Loo,
Hiroaki Arimura,
Daire Cott,
Liesbeth Witters,
Geoffrey Pourtois,
Andreas Schulze,
Bastien Douhard,
Wendy Vanherle,
Geert Eneman,
Olivier Richard,
Paola Favia,
Jérôme Mitard,
D. Mocuta,
R. Langer,
N. Collaert
Publication year - 2018
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2.0191802jss
Subject(s) - materials science , passivation , epitaxy , fin , engineering physics , optoelectronics , nanotechnology , layer (electronics) , composite material , engineering
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