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Atomic Layer Deposition of Nanolaminate Structures of Alternating PbTe and PbSe Thermoelectric Films
Author(s) -
K. Zhang,
Arun Deepak Ramalingom Pillai,
K. Bollenbach,
David Nminibapiel,
Wei Cao,
Helmut Baumgart,
Torsten Scherer,
Venkata Sai Kiran Chakravadhanula,
Christian Kübel,
Vladimir Kochergin
Publication year - 2014
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2.014406jss
Subject(s) - atomic layer deposition , materials science , lead telluride , lead selenide , thermoelectric effect , thin film , layer (electronics) , cadmium telluride photovoltaics , silicon , telluride , bilayer , nucleation , nanotechnology , deposition (geology) , superlattice , chemical engineering , optoelectronics , metallurgy , chemistry , organic chemistry , paleontology , biochemistry , physics , doping , membrane , sediment , biology , engineering , thermodynamics
and bis-(triethyl silyl) selane ((Et3Si)2Se) as ALD precursors for lead, tellurium and selenium. The experimental evidence revealed the ALD growth of lead telluride and lead selenide followed the Vollmer-Weber island growth mode. We found a strong dependence of the nucleation process on the temperature. In this paper, we present the optimized conditions for growing PbTe and PbSe thin film nanolaminates within the ALD process window range of 170 ◦ C to 210 ◦ C and discuss an early nano-scale PbTe/PbSe bilayer

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