Thermal and Chemical Integrity of Ru Electrode in Cu/TaOx/Ru ReRAM Memory Cell

A good candidate for replacing the inert platinum (Pt) electrode in the well-behaved Cu/TaO x /Pt resistive RAM memory cell is ruthenium (Ru), already successfully deployed in the CMOS back end of line. We benchmark Cu/TaO x /Ru device against Cu/TaO x /Pt and investigate the impact of embedment of Cu/TaO x /Ru on two different substrates, Ti(20nm)/SiO 2 (730nm)/Si and Ti(20nm)/TaO x (30nm)/SiO 2 (730nm)/Si, on the cell's electrical performance. While the devices show similar switching performance at some operating conditions, there are notable differences at other operation regimes shedding light on the basic switching mechanisms and the role of the inert electrode. The critical switching voltages are significantly higher for Ru than for Pt devices and can be partly explained by the work function difference and different surface roughness of the inert electrode. The poorer switching properties of the Ru device are attributed to the degraded inertness properties of the Ru electrode as a stopping barrier for Cu + ions as compared to the Pt electrode. However, some of the degraded electrical properties of the Ru devices can be mitigated by an improved integration of the device on the Si wafer. This improvement is attributed to the suppression of crystallization of Ru and its silicidation reactions that take place at elevated local temperatures, present mainly during the reset operation. This hypothesis has been corroborated by extensive XRD studies of multiple layer systems annealed at temperatures between 300K and 1173K.