Wet-Chemical Approaches for Atomic Layer Etching of Semiconductors: Surface Chemistry, Oxide Removal and Reoxidation of InAs (100) | Zendy

Dennis H. van Dorp | Zendy; Sophia Arnauts | Zendy; Frank Holsteyns | Zendy; Stefan De Gendt | Zendy

Open Access

Wet-Chemical Approaches for Atomic Layer Etching of Semiconductors: Surface Chemistry, Oxide Removal and Reoxidation of InAs (100)

Author(s) -

Dennis H. van Dorp,

Sophia Arnauts,

Frank Holsteyns,

Stefan De Gendt

Publication year - 2015

Publication title -

ecs journal of solid state science and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.488

H-Index - 51

eISSN - 2162-8777

pISSN - 2162-8769

DOI - 10.1149/2.0081506jss

Subject(s) - etching (microfabrication) , dissolution , isotropic etching , oxide , materials science , layer (electronics) , reactive ion etching , dry etching , analytical chemistry (journal) , inductively coupled plasma , semiconductor , chemical reaction , chemical engineering , inorganic chemistry , nanotechnology , chemistry , optoelectronics , plasma , metallurgy , environmental chemistry , organic chemistry , physics , engineering , quantum mechanics

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