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A Review of Hydrophilic Silicon Wafer Bonding
Author(s) -
V. Masteika,
Jan Kowal,
Nicholas Braithwaite,
Tony Rogers
Publication year - 2014
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2.007403jss
Subject(s) - wafer , microelectronics , materials science , microelectromechanical systems , wafer bonding , silicon , nanotechnology , oxide , optoelectronics , anodic bonding , metallurgy
Thisreviewcoversthekeypapersrelatingtothetheory,techniques and quantification of hydrophilically activated silicon wafer bonding. This begins with a review of the history and development of the art. Bond strength characterization is then reviewed followed first by models of physical deformation and then by plasma and radical activation techniques. In the interests of clarity and succinctness this review is not an attempt to exhaustively catalog all direct bonding wafer literature. Excluded are hydrophobic and UHV bonding, and the many papers applying bonding techniques to differing combinations of wafer materials. This paper concludes with a summery of the state of the art of direct wafer bonding and a summation of the current wafer-bonding model derived from the papers reviewed.

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