Open AccessLow-Temperature Solution-Processed ZrO2 Gate Insulators for Thin-Film Transistors Using High-Pressure Annealing
Author(s) -
Si Joon Kim,
Doo Hyun Yoon,
You Seung Rim,
Hyun Jae Kim
Publication year - 2011
Publication title -
electrochemical and solid-state letters
Language(s) - Uncategorized
Resource type - Journals
eISSN - 1944-8775
pISSN - 1099-0062
DOI - 10.1149/2.006111esl
Subject(s) - materials science , annealing (glass) , thin film transistor , optoelectronics , thin film , gate dielectric , transistor , dielectric , solution process , insulator (electricity) , high pressure , saturation (graph theory) , composite material , electrical engineering , nanotechnology , engineering physics , voltage , engineering , layer (electronics) , mathematics , combinatorics
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