Smooth, Low-Resistance, Pinhole-Free, Conformal Ruthenium Films by Pulsed Chemical Vapor Deposition | Zendy

Xinwei Wang | Zendy; Roy G. Gordon | Zendy

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Smooth, Low-Resistance, Pinhole-Free, Conformal Ruthenium Films by Pulsed Chemical Vapor Deposition

Author(s) -

Xinwei Wang,

Roy G. Gordon

Publication year - 2012

Publication title -

ecs journal of solid state science and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.488

H-Index - 51

eISSN - 2162-8777

pISSN - 2162-8769

DOI - 10.1149/2.003303jss

Subject(s) - materials science , ruthenium , chemical vapor deposition , combustion chemical vapor deposition , thin film , annealing (glass) , layer (electronics) , conformal coating , crystallite , chemical engineering , deposition (geology) , analytical chemistry (journal) , carbon film , composite material , nanotechnology , coating , metallurgy , organic chemistry , chemistry , engineering , catalysis , paleontology , sediment , biology

Ruthenium (Ru) thin films were deposited by pulsed chemical vapor deposition with precursors bis(N,N′-di-tertbutylacetamidinato) ruthenium(II)dicarbonyl, ammonia and hydrogen. Low-resistance polycrystalline Ru films with bulk density were obtained. Good adhesion to SiO2 substrates was achieved by introducing a thin layer of WN in between the Ru and the SiO2. Ru films only ∼2 nm thick fully covered the WN layer without any pinholes. Deposition of Ru inside narrow holes showed that good conformality was obtained by lowering the deposition temperature. The film surface was smooth, and the rms roughness value did not increase too much after rapid thermal annealing at 700°C. © 2012 The Electrochemical Society. All rights reserved.

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