Optical and Dielectric Characterization of Atomic Layer Deposited Nb2O5 Thin Films | Zendy

Timothee Blanquart | Zendy; Kaupo Kukli | Zendy; Jaakko Niinistö | Zendy; Valentino Longo | Zendy; Mikko Heikkilä | Zendy; Mikko Ritala | Zendy; Markku Leskelä | Zendy

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Optical and Dielectric Characterization of Atomic Layer Deposited Nb2O5 Thin Films

Author(s) -

Timothee Blanquart,

Kaupo Kukli,

Jaakko Niinistö,

Valentino Longo,

Mikko Heikkilä,

Mikko Ritala,

Markku Leskelä

Publication year - 2012

Publication title -

ecs solid state letters

Language(s) - English

Resource type - Journals

eISSN - 2162-8742

pISSN - 2162-8750

DOI - 10.1149/2.002201ssl

Subject(s) - materials science , atomic layer deposition , niobium , annealing (glass) , thin film , dielectric , deposition (geology) , characterization (materials science) , layer (electronics) , analytical chemistry (journal) , chemical engineering , optoelectronics , nanotechnology , composite material , metallurgy , chemistry , organic chemistry , paleontology , sediment , engineering , biology

Nb2O5 films were grown by atomic layer deposition using (tert-butylimido)tris(diethylamido)niobium as the niobium source and ozone as the oxygen source. The effects of deposition and post-deposition annealing conditions, physical thickness as well as the phase composition on the dielectric properties of Nb2O5 thin films have been investigated. In addition, the optical properties of the films have been evaluated. It was found that by tuning the deposition parameters and post deposition treatments it was possible to obtain high k-values up to 120 with reasonably low leakage current.

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