Electroplating of Aluminium on Silicon in an Ionic Liquid | Zendy

Wen-Ching Sun | Zendy; Xu Han | Zendy; Meng Tao | Zendy

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Electroplating of Aluminium on Silicon in an Ionic Liquid

Author(s) -

Wen-Ching Sun,

Xu Han,

Meng Tao

Publication year - 2015

Publication title -

ecs electrochemistry letters

Language(s) - English

Resource type - Journals

eISSN - 2162-8734

pISSN - 2162-8726

DOI - 10.1149/2.0021504eel

Subject(s) - electroplating , materials science , silicon , aluminium , annealing (glass) , ionic liquid , electrolyte , chloride , electrolysis , metallurgy , plating (geology) , wafer , chemical engineering , inorganic chemistry , chemistry , composite material , electrode , nanotechnology , layer (electronics) , catalysis , biochemistry , geophysics , engineering , geology

Electroplating of aluminum (Al) on silicon (Si) substrates has been demonstrated in an above-room-temperature ionic liquid for the metallization of wafer-Si solar cells. The electrolyte was prepared by mixing anhydrous aluminum chloride and 1-ethyl-3-methylimidazolium tetrachloroaluminate. The plating was carried out by means of galvanostatic electrolysis. The structural and compositional properties of the Al deposits were characterized, and the sheet resistance of the deposits revealed the effects of pre-bake conditions, deposition temperature, and post-deposition annealing conditions. It was found that dense, adherent Al deposits with resistivity in the high 10[superscript −6] Ω-cm range can be reproducibly obtained directly on Si substrates

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