Open AccessCommunication—Anomalous Shift of the Capacitance-Voltage Characteristics Obtained for p-MOS Capacitors with a Tin-Doped Indium Oxide Gate
Author(s) -
O. Malik,
Francisco Javier De la Hidalga-Wade
Publication year - 2016
Publication title -
ecs journal of solid state science and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.488
H-Index - 51
eISSN - 2162-8777
pISSN - 2162-8769
DOI - 10.1149/2.0011607jss
Subject(s) - materials science , capacitor , indium , annealing (glass) , indium tin oxide , capacitance , doping , optoelectronics , silicon , tin , oxide , silicon dioxide , voltage , nanotechnology , electrical engineering , electrode , thin film , metallurgy , chemistry , engineering
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